Influence of vacancies on the distribution of atomic steps on the silicon (111) surface
0000-0002-4016-593Х The material was received by the Editorial Board: 13.04.2007
УДК 539.211.537.533
Influence of vacancies on the distribution of atomic steps on the silicon (111) surface References: Kosolobov S.S., Latyshev A.V. Influence of vacancies on the distribution of atomic steps on the silicon (111) surface. Vestnik NSU. Series: Physics. 2007, vol. 2, no. 2. P. 40–50 (in Russ.). DOI: 10.54238/1818-7994-2007-2-2-40-50