6. Solid-State and Semiconductor Physics, Physics of Nanostructures

THE INFLUENCE OF SURFACE RECONSTRUCTION ON ARSENIC INCORPORATION PROCESSES DURING MBE OF GaAs

Mikhail А. Putyato
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
Boris R. Semyagin
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
Andrey V. Vasev
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
vasev@isp.nsc.ru
The material was received by the Editorial Board: 10.07.2008
The incorporation factors of arsenic (SAs) for As2 and As4 molecular flux during GaAs MBE were detected. It has been determined that SAs does not depend on the arsenic molecular forms in incident flux. The correlation between SAs and reconstruction state of GaAs(001) grown surface have been shown. The maximal values of SAs for GaAs(001)-(4×2) and - (2×4) surfaces are characterized by 0.42 and 0.72, respectively. The dependences of arsenic incorporation rate and SAs during GaAs MBE versus substrate temperature (Ts ) and incident flux density were obtained.

Keywords:
GaAs, surface, MBE, RHEED, reconstruction
УДК 621.315.592: 538.971; 548.52

THE INFLUENCE OF SURFACE RECONSTRUCTION ON ARSENIC INCORPORATION PROCESSES DURING MBE OF GaAs
References: Putyato M.A., Semyagin B.R., Vasev A.V., Preobrazhensky V.V. THE INFLUENCE OF SURFACE RECONSTRUCTION ON ARSENIC INCORPORATION PROCESSES DURING MBE OF GaAs. Vestnik NSU. Series: Physics. 2008, vol. 3, no. 3. P. 81–87 (in Russ.). DOI: 10.54362/1818-7919-2008-3-3-81-87