6. Solid-State and Semiconductor Physics, Physics of Nanostructures

THE KINETICS OF (2×4) --> (3×1(6)) RECONSTRUCTION TRANSITION ON GaAs SURFACE

Andrey V. Vasev
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
vasev@isp.nsc.ru
Mikhail А. Putyato
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
Boris R. Semyagin
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
The material was received by the Editorial Board: 10.07.2008
The features of (2×4) --> (3×1(6)) superstructure transition on GaAs(100) surface realized during rapid change of arsenic flux density were studied using RHEED method. The time dependences of ISB RHEED were obtained during this transition. The measurement data were analyzed in the framework of JMAK (Johnson – Melh – Avrami – Kolmogorov) kinetic model. The complex (double-state) structure of the transition process has been detected. This process is realized through the intermediate disordered state with different reconstructions domains coexisting on the surface. Activation energies and rates of the phase transition are defined for each stage. The procedure for precise temperature determination for GaAs(001) surface is proposed. This procedure uses the features of (2×4) --> (3×1(6)) reconstruction transition kinetics.

Keywords:
GaAs, surface, RHEED, reconstruction.
УДК 621.315.592:548.736.324;538.971:548.51;537.533.73

THE KINETICS OF (2×4) --> (3×1(6)) RECONSTRUCTION TRANSITION ON GaAs SURFACE
References: Vasev A.V., Putyato M.A., Semyagin B.R., Preobrazhensky V.V. THE KINETICS OF (2×4) --> (3×1(6)) RECONSTRUCTION TRANSITION ON GaAs SURFACE. Vestnik NSU. Series: Physics. 2008, vol. 3, no. 3. P. 88–94 (in Russ.). DOI: 10.54362/1818-7919-2008-3-3-88-94