6. Solid-State and Semiconductor Physics, Physics of Nanostructures

The Techniques of InAs Structure-Ordered Surface Preparation

Natalya А. Valisheva
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
Tatyana А. Levtzova
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
Mikhail А. Putyato
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
The material was received by the Editorial Board: 10.07.2008
The physical parameters of various electronics devices are depended on the properties of semiconductor interface, in particular, surface morphology. The aim of our research was to investigate a influence of chemical treatment and a vacuum annealing of substrates with and without indium flux on the morphology of InAs (111)A surface. The growth of InAs layers by molecular-beam epitaxy was conducted after oxide layer desorption. The morphology of the surface was inspected by the atomic force microscopy method at each stage. It was shown that only the treatment of InAs (111)A surface by HCl in isopropyl alcohol solution allows to obtain smoother surface after thermal annealing in compare with other etches. The using of indium flux during the oxide deleting increases this effect. The oxide thermal desorption modes from InAs (111)A surface in vacuum and in indium flux are defined. The character of surface roughness change with increase of epitaxy layer thickness is determined.

Keywords:
surface morphology, InAs, chemical treatment, vacuum annealing, epitaxial growth.
УДК 621.315.592:548.736.324:538.971;537.533.73

The Techniques of InAs Structure-Ordered Surface Preparation
References: Valisheva N.A., Levtsova T.A., Putyato M.A., Semyagin B.R., Seleznev V.A., Preobrazhensky V.V. The Techniques of InAs Structure-Ordered Surface Preparation. Vestnik NSU. Series: Physics. 2008, vol. 3, no. 4. P. 3–8 (in Russ.). DOI: 10.54362/1818-7919-2008-3-4-3-8