6. Solid-State and Semiconductor Physics, Physics of Nanostructures

Impact of the Reconstruction Condition on Gallium Arsenide Surface Morphology during Molecular-Beam Epitaxy and Vacuum Annealing

Andrey V. Vasev
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
vasev@isp.nsc.ru
Mikhail А. Putyato
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
Boris R. Semyagin
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
The material was received by the Editorial Board: 10.07.2008
The peculiarities of morphological evolution during GaAs(001) molecular beam epitaxy are studied by RHEED and AFM methods. A clear correlation is established between surface superstructure and morphological evolution. Thermodynamic conditions are experimentally determined which provide the most perfect GaAs(001) epilayer surface. For the (2 × 4) surface reconstruction growth conditions are established which give rise to surface roughening. A new technique is proposed and tested to significantly increase the efficacy of surface smoothening procedure under As flux.

Keywords:
GaAs, surface morphology, reconstruction, vacuum annealing, molecular-beam epitaxy
УДК 538.911; 538.913; 537.874.6

Impact of the Reconstruction Condition on Gallium Arsenide Surface Morphology during Molecular-Beam Epitaxy and Vacuum Annealing
References: Vasev A.V., Putyato M.A., Semyagin B.R., Seleznev V.A., Preobrazhensky V.V. Impact of the Reconstruction Condition on Gallium Arsenide Surface Morphology during Molecular-Beam Epitaxy and Vacuum Annealing . Vestnik NSU. Series: Physics. 2008, vol. 3, no. 4. P. 9–19 (in Russ.). DOI: 10.54362/1818-7919-2008-3-4-9-19