Impact of the Reconstruction Condition on Gallium Arsenide Surface Morphology during Molecular-Beam Epitaxy and Vacuum Annealing

Подробнее The peculiarities of morphological evolution during GaAs(001) molecular beam epitaxy are studied by RHEED and AFM methods. A clear correlation is established between surface superstructure and morphological evolution. Thermodynamic conditions are experimentally determined which provide the most perfect GaAs(001) epilayer surface. For the (2 × 4) surface reconstruction growth conditions are established which give rise to surface roughening. A new technique is proposed and tested to significantly increase the efficacy of surface smoothening procedure under As flux.

Keywords:
GaAs, surface morphology, reconstruction, vacuum annealing, molecular-beam epitaxy
УДК 538.911; 538.913; 537.874.6

Impact of the Reconstruction Condition on Gallium Arsenide Surface Morphology during Molecular-Beam Epitaxy and Vacuum Annealing