ATOMIC STEPS ON A SILICON SURFACE AS IS TEST-OBJECT IN ATOMIC FORCE MICROSCOPY

Dmitriy A. Nasimov
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
Dmitriy V. Sheglov
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
sheglov@thermo.isp.nsc.ru
Aleksandr V. Latyshev
1. Novosibirsk State University Novosibirsk, Russian Federation
2. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
latyshev@isp.nsc.ru
The material was received by the Editorial Board: 19.01.2009
To ensure uniformity of measurements in nanotechnology test-object have been developed. It provide precise calibration of z-coordinates of the atomic force microscope in the sub-and nanometer bands with an accuracy of 0.05 nm on the basis of a system of atomic steps, one interplanar distance in height, at the vicinal surface of silicon. Extremely high precision of the test-object is provided by comparing its values with the atomic lattice parameter of the perfect crystal.

Keywords:
atomic-force microscopy, metrology, certification, atomic steps, surface.
УДК 53.083.98
PACs 06.20.fb, 68.37.Ps, 68.47.fg

ATOMIC STEPS ON A SILICON SURFACE AS IS TEST-OBJECT IN ATOMIC FORCE MICROSCOPY
References: Nasimov D.A., Sheglov D.V., Latyshev A.V. ATOMIC STEPS ON A SILICON SURFACE AS IS TEST-OBJECT IN ATOMIC FORCE MICROSCOPY. Vestnik NSU. Series: Physics. 2009, vol. 4, no. 1. P. 47–55 (in Russ.). DOI: 10.54362/1818-7919-2009-4-1-47-55