6. Solid-State and Semiconductor Physics, Physics of Nanostructures

ANHARMONICITY OF PHONONS IN SILICON: RAMAN SPECTROSCOPY STUDY

Aleksandr S. Kachko
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
kachko.alex@gmail.com
Vladislav N. Vakhovskiy
1. Novosibirsk State University Novosibirsk, Russian Federation
Vladimir A. Volodin
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
volodin@isp.nsc.ru
The material was received by the Editorial Board: 12.10.2009
Anharmonicity of phonons in silicon manifesting in dependence of peak frequency in Raman spectrum versus temperature in range from 80 to 900 K was studied. The obtained data allow to improve method of definition of average sizes of silicon nanocrystals using Raman scattering data analysis, in the case of the not room temperature of nanocrystals during spectroscopic measurements.

Keywords:
Raman scattering, phonons, anharmonicity, silicon, nanocrystals.
УДК 537.9, 536.4

ANHARMONICITY OF PHONONS IN SILICON: RAMAN SPECTROSCOPY STUDY
References: Kachko A. S., Vakhovskiy V. N., Volodin V. A. ANHARMONICITY OF PHONONS IN SILICON: RAMAN SPECTROSCOPY STUDY. Vestnik NSU. Series: Physics. 2010, vol. 5, no. 1. P. 48–55 (in Russ.). DOI: 10.54362/1818-7919-2010-5-1-48-55