THE IMPACT OF STATIONARY CROSSED ELECTRICAL AND MAGNETIC FIELDS ON EXCESS CHARGE CARRIERS GENERATED BY RADIATION IN p-TYPE MERCURY-CADMIUM-TELLURIDE EPITAXIAL FILMS (REVIEW)
The material was received by the Editorial Board: 12.12.2009
The main characteristics of infrared photodetectors on base of p-type mercury-cadmium-telluride epitaxial films are mainly governed by recombination and diffusion parameters of minor charge carriers. The investigation of excess charge carriers behavior in epitaxial films placed in stationary crossed electrical and magnetic fields is allows determining of this parameters. This paper reviews of such photoelecromagnetic methods for investigation of excess charge carriers’ recombination and diffusion properties as methods of photomagnetic effects and photoconductivity in magnetic fields for Voight and Faradey geometry. Keywords:
narrow-gap semiconductors, epitaxial films, photoelectromagnetics methods, recombination parameters.
УДК 621.315.592
THE IMPACT OF STATIONARY CROSSED ELECTRICAL AND MAGNETIC FIELDS ON EXCESS CHARGE CARRIERS GENERATED BY RADIATION IN p-TYPE MERCURY-CADMIUM-TELLURIDE EPITAXIAL FILMS (REVIEW) References: Kostyuchenko V. Ya. THE IMPACT OF STATIONARY CROSSED ELECTRICAL AND MAGNETIC FIELDS ON EXCESS CHARGE CARRIERS GENERATED BY RADIATION IN p-TYPE MERCURY-CADMIUM-TELLURIDE EPITAXIAL FILMS (REVIEW). Vestnik NSU. Series: Physics. 2010, vol. 5, no. 1. P. 66–81 (in Russ.). DOI: 10.54362/1818-7919-2010-5-1-66-81