ELECTRICAL PARAMETERS Of Si n-MOSFET THz-DETECTOR: MATCHING WITH EXTERNAL AMPLIFIER
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Keywords:
THz detectors, field-effect transistors, matching amplifiers.
УДК 538.9
ELECTRICAL PARAMETERS Of Si n-MOSFET THz-DETECTOR: MATCHING WITH EXTERNAL AMPLIFIER
The material was received by the Editorial Board: 15.09.2010
The influence of the external load resistance on voltage and current sensitivities of Si n-MOSFET THz detectors at radiation frequency ν=142 GHz is investigated. The noise level in the frequency band, which is needed for real-time imaging is specified. Investigated were transistors with the gate widths and lengths within 1×1 µm2
and 20×20 µm2
. It is shown that internal resistance and external load resistance form the divider, the parameters of which are important for matching with read-out devices. Keywords:
THz detectors, field-effect transistors, matching amplifiers.
УДК 538.9
ELECTRICAL PARAMETERS Of Si n-MOSFET THz-DETECTOR: MATCHING WITH EXTERNAL AMPLIFIER References: Sizov F. F., Golenkov O. G., Reva V. P., But D. B. ELECTRICAL PARAMETERS Of Si n-MOSFET THz-DETECTOR: MATCHING WITH EXTERNAL AMPLIFIER . Vestnik NSU. Series: Physics. 2010, vol. 5, no. 4. P. 59–62. DOI: 10.54362/1818-7919-2010-5-4-59-62