6. Solid-State and Semiconductor Physics, Physics of Nanostructures

THE NETWORK OF PHOTOELECTROMAGNETICS METHODS FOR DETERMINATION OF RECOMBINATION AND DIFFUSION PARAMETERS OF CHARGE CARRIERS IN EPITAXIAL FILMS MERCURY-CADMIUM-TELLURIDE p-TYPE

Vladimir Ya. Kostyuchenko
1. Optics and Optical Technologies Institute, Siberian State University of Geosystems and Technology, Novosibirsk, Russia
V.Y.Kostuk@ssga.ru
Dmitriy Yu. Protasov
1. Optics and Optical Technologies Institute, Siberian State University of Geosystems and Technology, Novosibirsk, Russia
2. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
The material was received by the Editorial Board: 03.11.2010
In this paper the network of photoelectromagnetic methods of definition recombination and diffusion parameters developed for p-type epitaxial mercury-cadmium-tellurium films at temperature 77÷125 K is offered. The network includes the methods based on measurement of photoconductivity in a magnetic field for Voight and Faradey geometry, photomagnetic effect, Hall effect and magnitoresistance.

Keywords:
narrow-gap semiconductors, epitaxial films, photoelectromagnetics methods, recombination parameters.
УДК 621.315.592

THE NETWORK OF PHOTOELECTROMAGNETICS METHODS FOR DETERMINATION OF RECOMBINATION AND DIFFUSION PARAMETERS OF CHARGE CARRIERS IN EPITAXIAL FILMS MERCURY-CADMIUM-TELLURIDE p-TYPE
References: Kostyuchenko V. Ya., Protasov D. Yu. THE NETWORK OF PHOTOELECTROMAGNETICS METHODS FOR DETERMINATION OF RECOMBINATION AND DIFFUSION PARAMETERS OF CHARGE CARRIERS IN EPITAXIAL FILMS MERCURY-CADMIUM-TELLURIDE p-TYPE. Vestnik NSU. Series: Physics. 2011, vol. 6, no. 1. P. 104–115 (in Russ.). DOI: 10.54362/1818-7919-2011-6-1-104-115