ELECTROMIGRATION OF SILICON ADATOMS ON SILICON (111) SURFACE
0000-0003-4940-7074 The material was received by the Editorial Board: 18.04.2011
Existence of adatom gradient concentration on surface between step bunches was shown under sublimation, homoepitaxial growth and near equilibrium conditions on silicon (111) surface at above 900 ºС by means of in situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy. It is experimentally confirmed that adatom have negative (at 1 100 ºС) and positive (at 1 300 ºС) effective charge. We found out the sign of adatom effective charge independent on the supersaturation volume on the surface. On the hasement of experimental data we evaluated the effective charge of adatom at 1 280ºС; this quantity is placed between 0,07 ± 0,01 and 0,17 ± 0,02 of electron unit. Keywords:
atomic steps, silicon surface, electromigration, effective charge of adatom.
УДК 539.211.537.533
ELECTROMIGRATION OF SILICON ADATOMS ON SILICON (111) SURFACE References: Rodyakina E. Е., Kosolobov S. S., Latyshev A. V. ELECTROMIGRATION OF SILICON ADATOMS ON SILICON (111) SURFACE. Vestnik NSU. Series: Physics. 2011, vol. 6, no. 2. P. 65–76 (in Russ.). DOI: 10.54362/1818-7919-2011-6-2-65-76