6. Solid-State and Semiconductor Physics, Physics of Nanostructures

CREATION OF NANOPERIODICAL MULTILAYER SI/SIO2 STRUCTURES IN PLASMA-CHEMICAL REACTOR OF INDUCTION TYPE AND THEIR PROPERTIES

Gennadiy N. Kamaev
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
kamaev@isp.nsc.ru
Mikhail D. Efremov
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
efremov@isp.nsc.ru
Aleksandr Kh. Antonenko
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
The material was received by the Editorial Board: 14.10.2011
Multilayer structures with extra-thin SiO2 and hydrogenated amorphous silicon (α-Si: H) layers were created and investigated. Structures were obtained using cycles of deposition of the films α-Si: H and their subsequent partial oxidation in oxygen plasma. Properties of the structures were investigated by electron microscopy, Raman spectroscopy, photoluminescence techniques and by measurements of their electrical characteristics.

Keywords:
multilayer nanoperiodical structures, ultrathin SiO2 films, plasma-chemical deposition, charging of electrical states in dielectric.
УДК 621.315.592

CREATION OF NANOPERIODICAL MULTILAYER SI/SIO2 STRUCTURES IN PLASMA-CHEMICAL REACTOR OF INDUCTION TYPE AND THEIR PROPERTIES
References: Kamaev G. N., Efremov M. D., Antonenko A. Kh., Volodin V. A., Arzhannikova S. A., Marin D. V., Gismatulin A. A. CREATION OF NANOPERIODICAL MULTILAYER SI/SIO2 STRUCTURES IN PLASMA-CHEMICAL REACTOR OF INDUCTION TYPE AND THEIR PROPERTIES. Vestnik NSU. Series: Physics. 2011, vol. 6, no. 4. P. 107–114 (in Russ.). DOI: 10.54362/1818-7919-2011-6-4-107-114