ULTRAVIOLET RADIATION ACTION ONTO NANOSTRUCTURES WITH QUANTUM WELLS GaAs/AlGaAs
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Keywords:
semiconductor heterostructures, quantum wells, point defects, electron-hole recombination rate, UV irradiation.
УДК 535:621.373.826:539
ULTRAVIOLET RADIATION ACTION ONTO NANOSTRUCTURES WITH QUANTUM WELLS GaAs/AlGaAs
The material was received by the Editorial Board: 05.07.2012
Optical properties modification of semiconductor heterostructure with quantum wells GaAs/AlGaAs by the ultraviolet (UV) radiation was investigated in the range of energy density of 0 – 500 mJ/cm2 . It was shown that photoluminescence signal amplitude decreases with an increase of UV energy density; this dependence revealed threshold nature with the threshold value about 100 mJ/cm2 – in agreement with other results on laser formation of the point defects in GaAs. Reflectivity kinetics of the sample detected at the probe radiation wavelength corresponding to the photoluminescence line center showed an increase of electron-hole recombination rate with growth of UV energy density. Sharp focusing of UV laser radiation led to a plume formation over the sample surface; spectrum of the plume contained neutral gallium atoms doublet at wavelengths of 403 нм and 417 nm. Keywords:
semiconductor heterostructures, quantum wells, point defects, electron-hole recombination rate, UV irradiation.
УДК 535:621.373.826:539
ULTRAVIOLET RADIATION ACTION ONTO NANOSTRUCTURES WITH QUANTUM WELLS GaAs/AlGaAs References: Rozhin A. A., Kochubei S. A., Rubtsova N. N., Shamirzaev T. S., Kovalyov A. A., Semyagin B. R., Preobrazhenskii V. V., Putyato M. A., Buganov O. V., Tikhomirov S. A. ULTRAVIOLET RADIATION ACTION ONTO NANOSTRUCTURES WITH QUANTUM WELLS GaAs/AlGaAs. Vestnik NSU. Series: Physics. 2012, vol. 7, no. 4. P. 117–126 (in Russ.). DOI: 10.54362/1818-7919-2012-7-4-117-126