Formation Two Dimensional Negative Islands at High Rate Cooling of Ultra-Flat Surface Si(111)
0000-0002-2398-8272 The material was received by the Editorial Board: 04.12.2015
In situ ultrahigh vacuum reflection electron and ex situ atomic force microscopy have been applied to investigate morphology transformations of the ultra-flat stepped Si(111) surface with wide (20–50 µm in diameter) singular terraces during sublimation and quenching from elevated temperatures. The formation of two dimensional negative (vacancy) islands has been observed on the wide terraces after the quenching from temperatures above 1 200°C. The increasing of the critical terrace size for the two-dimensional negative island nucleation has been explained by the changing of the atomic mechanism of mass transport on silicon surface.Keywords:
silicon surface, ultrahigh vacuum reflection electron microscopy, quenching.
УДК 539.211, 538.971
Formation Two Dimensional Negative Islands at High Rate Cooling of Ultra-Flat Surface Si(111) References: Sitnikov S. V., Kosolobov S. S., Latyshev A. V. Formation Two Dimensional Negative Islands at High Rate Cooling of Ultra-Flat Surface Si(111). Vestnik NSU. Series: Physics. 2016, vol. 11, no. 1. P. 94–99. (in Russ.). DOI: 10.54362/1818-7919-2016-11-1-94-99