REFLECTIVITY KINETICS OF THE FAST SEMICONDUCTOR MIRROR

Read more The shape of kinetic curves for reflectivity of the fast semiconductor A₃B₅ mirror with saturable absorption is investigated by single-frequency pump-probe technique centered at 1 035 nm with the pulse duration of 130 fs and the repetition rate of 70 MHz in the exciting radiation intensities region of 0.16–5.44 GW/cm² . Modeling and comparison with the experiment is accomplished. It is shown that the signal increase is determined by the femtosecond radiation pulse front and by the excitons lifetime; the short peak at the beginning of the curve reflects the process of excitons ionization. The charge free carriers contribution appears after quasi-equilibrium installation time of about 1 ps, and it disappears with the characteristic electron-hole recombination time of about 10 ps, which controls the mirror’s performance.

Keywords:
quantum wells, fast semiconductor A₃B₅ mirrors with absorption saturation, passive mode-locking of lasers.
УДК 535:621.373.826:539

REFLECTIVITY KINETICS OF THE FAST SEMICONDUCTOR MIRROR