SECOND HARMONIC GENERATION IN Al0.1Ga0.9N THIN FILM

Gennady M. Borisov
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
gennadiy.m.borisov@gmail.com
Veniamin G. Gol’dort
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
goldort@academ.org
Konstantin S. Zhuravlev
1. A. V. Rzhanov Institute of Semiconductor Physics SB RAS 13 Academician Lavrentiev Ave., Novosibirsk, 630090, Russian Federation
2. Novosibirsk State University 2 Pirogov Str., Novosibirsk, 630090, Russian Federation
The material was received by the Editorial Board: 15.03.2018
Second harmonic of femtosecond laser Yb3+:KY(WO4)2 generated in transmission of thin film Al0,1Ga0,9N grown on sapphire monocrystal of (0001) orientation does not reveal any saturation up to infrared pumping intensity 200 MW/cm2 . The p-polarized second harmonic radiation was detected both for p-polarized and s-polarized pumping radiation; the second harmonic signal is essentially lower in the second case. In both cases, the second harmonic signal is absent at normal incidence, and it reaches maximum value at incidence angle of about 50 degree with further decrease. Lateral non-homogeneity was detected at 5 % level; absence of azimuth dependence corresponding to sixth order symmetry axis is considered.

Keywords:
second harmonic generation, nano-size A3B5 semiconductor materials.
УДК 535:621.373.826:539

SECOND HARMONIC GENERATION IN Al0.1Ga0.9N THIN FILM
References: Borisov G. M., Gol’dort V. G., Zhuravlev K. S., Kovalyov A. A., Kochubei S. A., Ledovskikh D. V., Malin T. V., Rubtsova N. N. SECOND HARMONIC GENERATION IN Al0.1Ga0.9N THIN FILM . Siberian Journal of Physics . 2018, vol. 13, no. 2. P. 64–69. (in Russ.). DOI: 10.25205/2541-9447-2018-13-2-64-69