INFLUENCE OF IMPURITY CENTERS AND RECOMBINATION PROCESSES ON PHOTOELECTRICITY OF PHOTOELEMENTS
The material was received by the Editorial Board: 15.03.2018
The article deals with photoelectric phenomena in solar batteries, as well as the influence of impurity atoms and recombination processes on the photosensitivity of photocells. Explained the relationship between the rate of recombination in semiconductors and the concentration of carriers of a non-equilibrium charge formed under the influence of light. The dependence of the lifetime of charge carriers on the location of recombination centers is also shown. Keywords:
silicon, photocell, impurity, generation, recombination, semiconductor, photosensitivity, solar battery.
УДК 621.315.592
INFLUENCE OF IMPURITY CENTERS AND RECOMBINATION PROCESSESON PHOTOELECTRICITY OF PHOTOELEMENTS References: Alikulov M. N. INFLUENCE OF IMPURITY CENTERS AND RECOMBINATION PROCESSES ON PHOTOELECTRICITY OF PHOTOELEMENTS . Siberian Journal of Physics . 2018, vol. 13, no. 2. P. 80–85. (in Russ.). DOI: 10.25205/2541-9447-2018-13-2-80-85