6. Raman Spectroscopy– 90 Years of Investigations

POROUS Ge LAYER FORMATION AND THEIR STUDY BY OPTICAL METHODS

Eugene B. Gorokhov
1. Institute of Semiconductor Physics SB RAS 13 Academician Lavrentiev Ave., Novosibirsk, 630090, Russian Federation
gorokhov@isp.nsc.ru
Kseniya N. Astankova
1. Institute of Semiconductor Physics SB RAS 13 Academician Lavrentiev Ave., Novosibirsk, 630090, Russian Federation
Vladimir A. Volodin
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
volodin@isp.nsc.ru
The material was received by the Editorial Board: 01.07.2018
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2 heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2 heterolayers. In the porous germanium films formed the sizes of the Ge nanocrystals were decreased due to oxidation in air and resonance Raman scattering appeared. Resonance Raman scattering was accompanied by photoluminescence (PL) (bands in the range of 2.1–2.5 eV and 1.5–1.7 eV) excited by a laser with quantum energy of 2.6 eV at room temperature. PL signals in the range of 2.1–2.5 eV can be explained by high-energy transitions in Ge nanocrystals.

Keywords:
porous germanium, resonance Raman scattering, photoluminescence. 
УДК 535.37; 538.958

POROUS Ge LAYER FORMATION AND THEIR STUDY BY OPTICAL METHODS
References: Gorokhov E. B., Astankova K. N., Volodin V. A., Kravtsova A. Yu., Latyshev A. V. POROUS Ge LAYER FORMATION AND THEIR STUDY BY OPTICAL METHODS . Siberian Journal of Physics . 2018, vol. 13, no. 3. P. 78–81. (in Russ.). DOI: 10.25205/2541-9447-2018-13-3-78-81