Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

Annotation
The article shows the selection of the optimal process regime for the growth of epitaxial layers of Si_1–xGe_x solid solutions from tin and gallium solution – melt on a Si<111> substrate, with the lowest dislocation densities that we experimentally achieved. An exponential relationship was found between the values of the dislocation density and the film thickness.With a smooth variable composition of the structure, respectively, by smoothly changing the lattiece parameters of the graded-gap solid solution, structurally perfect epitaxial layers Si_1–xGe_x (0 < x < 1) were obtained.

Keywords
epitaxy, crystallization, melt solution, solid solution, heterostructure, dislocation, substrate
Funding
The work was carried out under the grant FA-F2-003 of the Academy of Sciences of the Republic of Uzbekistan: “Photo-, thermoelectric and radiative effects in multicomponent solid solutions with nanocrystals based on molecules of elementary semi-conductors and semiconductor compounds”
УДК 621.315.592

Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si_1–xGe_x (RUS)