6. Solid-State and Semiconductor Physics, Physics of Nanostructures

CRYSTALLIZATION OF CLUSTERS OF AMORPHOUS SILICON IN SiNx FILMS ON GLASS SUBSTRATES USING NANOSECOND PULSE IMPACTS OF EXCIMER KrF LASER

Taisiya T. Korchagina
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
Taisiya999@mail.ru
Vladimir A. Volodin
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
volodin@isp.nsc.ru
Aleksandr A. Popov
1. Valiev Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl Branch Yaroslavl, Russia
The material was received by the Editorial Board: 15.01.2009
Interest to semiconductor nanocrystals in dielectric matrix is raised by observation of quantum-size effects in such structures even at room temperature. The approach for crystallization of clusters of amorphous silicon in SiNx (0.6 < x < 1.3) films deposited on glass substrates was supposed and developed. The approach is based on nanosecond pulse treatments by excimer KrF laser irradiation. Relatively big energy of photon (5 eV) leads to effective absorbance of the laser irradiation in the SiNx films, causing pulse heating and consequent crystallization of amorphous silicon clusters. The analysis of phase composition of the clusters has been carried out using Raman scattering spectroscopy.

Keywords:
Laser crystallization, nanocrystals, nanoclusters, silicon, silicon nitride.
УДК 537.9, 536.4

CRYSTALLIZATION OF CLUSTERS OF AMORPHOUS SILICON IN SiNx FILMS ON GLASS SUBSTRATES USING NANOSECOND PULSE IMPACTS OF EXCIMER KrF LASER
References: Korchagina T. T., Volodin V. A., Popov A. A., Chichkov B. N. CRYSTALLIZATION OF CLUSTERS OF AMORPHOUS SILICON IN SiNx FILMS ON GLASS SUBSTRATES USING NANOSECOND PULSE IMPACTS OF EXCIMER KrF LASER. Vestnik NSU. Series: Physics. 2009, vol. 4, no. 2. P. 47–52 (in Russ.). DOI: 10.54362/1818-7919-2009-4-2-47-52