THREE SECTIONAL DRIFT-DIFFUSION MATHEMATICAL MODEL OF THE FIELD EFFECT TRANSISTOR WITH A SCHOTTKY BARRIER
The material was received by the Editorial Board: 25.11.2014
Three sectional drift-diffusion mathematical model of the field effect transistor with a Schottky barrier is proposed. It takes into account the accumulation of charge carriers in the additionally introduced third section, which significantly improves the accuracy of the calculation of the current-voltage characteristics flat area of the transistors. This is important for developers of these transistors, as well as for amplifying and autogenerating microwave devices constructors. Keywords:
mathematical model, Schottky barrier, the microwave device.
УДК 621.382.333
THREE SECTIONAL DRIFT-DIFFUSION MATHEMATICAL MODEL OF THE FIELD EFFECT TRANSISTOR WITH A SCHOTTKY BARRIER References: Savelkaev S. V., Airapetyan V. S., Litovchenko V. A. THREE SECTIONAL DRIFT-DIFFUSION MATHEMATICAL MODEL OF THE FIELD EFFECT TRANSISTOR WITH A SCHOTTKY BARRIER. Vestnik NSU. Series: Physics. 2015, vol. 10, no. 1. P. 57–62 (in Russ.). DOI: 10.54362/1818-7919-2015-10-1-57-62