Formation of Two-Dimensional Photonic Crystals with Cavities Arrays in Silicon

Dmitriy E. Utkin
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
utkinde@isp.nsc.ru
Aleksandr A. Shklyaev
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
2. Novosibirsk State University Novosibirsk, Russian Federation
shklyaev@isp.nsc.ru
Fedor N. Dultsev
1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk, Russian Federation
fdultsev@isp.nsc.ru
The material was received by the Editorial Board: 07.12.2015
Specific aspects of finely focused electron beam interaction with the PMMA-950K resist for the fabrication of closely spaced holes having inhomogeneous spatial distributions are studied. The technological parameters for the creation of two-dimensional photonic crystals with microcavities (missing holes) arrays, which allow obtaining the lateral sizes of the structure within the accuracy better than 2 %, in silicon using electron-beam lithography are determined. Such holes fabrication accuracy is thought to be sufficient to study the interference effects of cavity array radiation in twodimensional photonic crystals.

Keywords:
electron beam lithography, two dimensional photonic crystals, silicon, scanning electron microscopy. 
УДК 538.958 + 621.382

Formation of Two-Dimensional Photonic Crystals with Cavities Arrays in Silicon
References: Utkin D. E., Shklyaev A. A., Dultsev F. N., Latyshev A. V. Formation of Two-Dimensional Photonic Crystals with Cavities Arrays in Silicon. Vestnik NSU. Series: Physics. 2016, vol. 11, no. 1. P. 88–93. (in Russ.). DOI: 10.54362/1818-7919-2016-11-1-88-93