ELECTROMIGRATION EFFECT ON SILICON (001) SURFACE UNDER HOMOEPITAXY CONDITIONS
0000-0003-4940-7074 The material was received by the Editorial Board: 23.12.2017
In situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy were applied to investigate initial stages of drift induced step bunching instabilities on silicon (001) surface at 1100 °С with homoepitaxial growth and sublimation. The power low time dependences of mean distance, mean terrace width between atomic step bunches were obtained. It was found powers have been different under sublimation and growth conditions and were less than 0.5 that have been previously experimentally measured for long time dependence. Our observation showed that growth rate increasing have suppressed combining steps in the bunch due to increasing of step fluctuation amplitude at initial stage of bunching. Keywords:
silicon surface, electromigration, epitaxial growth, atomic steps.
УДК 539.211.537.533
ELECTROMIGRATION EFFECT ON SILICON (001) SURFACE UNDER HOMOEPITAXY CONDITIONSReferences: Rodyakina E. E., Sitnikov S. V., Latyshev A. V. ELECTROMIGRATION EFFECT ON SILICON (001) SURFACE UNDER HOMOEPITAXY CONDITIONS. Siberian Journal of Physics . 2017, vol. 12, no. 4. P. 73–78. (in Russ.). DOI: 10.25205/2541-9447-2017-12-4-73-78